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B0922BA1 HYB25 M400070 SST25VF 06PBF SMCJ36A LT1EP53A SC460308
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  Datasheet File OCR Text:
 Chip Schottky Barrier Diodes
FM520 THRU FM5100
Silicon epitaxial planer type
Formosa MS
SMC
0.276(7.0) 0.260(6.6) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6)
0.189(4.8) 0.173(4.4)
0.244(6.2) 0.228(5.8)
0.087(2.2) 0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE DO-214AB C Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gr am
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 5.0 150 0.5 50 Rq JA CJ TSTG -55 15 380 +150
o
UNIT A A mA mA C/w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SS52 SS53 SS54 SS55 SS56 SS58 S510
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM520 FM530 FM540 FM550 FM560 FM580 FM5100 20 30 40 50 60 80 100
(V) 14 21 28 35 42 56 70
(V) 20 30 40 50 60 80 100
(V)
0.55
-55 to +125
*1 Repetitive peak reverse voltage
0.70 -55 to +150 0.85
*2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM520 THRU FM5100)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
6.0 5.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
4.0
00 51 FM 0~ 55 FM 0 54 FM 0~ 52 FM
FM 52
FM 56 0~
0
3.0 2.0 1.0 0 0 20 40 60
10 3.0 1.0
0~ FM 54
0
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FM 58
FM 55
0~ FM 51
00
Tj=25 C Pulse Width 300us 1% Duty Cycle
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
150
0.1
PEAK FORWARD SURGE CURRENT,(A)
120
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
90
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
FORWARD VOLT AGE,(V)
60
30
FIG.5 - TYPICAL REVERSE
0 1 5 10 50 100
CHARACTERISTICS 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
1400 1200 1000 800 600 400 200 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
Tj=75 C
1.0
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)


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